2N5015 2N5015s semelab plc reserves the right to change test conditions, paramet er limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. howeve r semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7992 issue 1 absolute maximum ratings t case = 25c unless otherwise stated v cbo collector - base voltage 1000v v cer collector - emitter voltage (r be = 1.0k ? ) 1000v v ebo emitter ? base voltage 5v i c continuous collector current 0.5a p tot total power dissipation t case = 50c 2w de-rate linearly t case > 25c 20mw/c t stg, t j operating and storage temperature range -55 to +150c features ? silicon planar epitaxial npn transistor ? high breakdown voltage ? low saturation voltage ? hermetic to5 or to39 (?s? suffix) package ? hi-reliability screen ing options available applications for high reliability general purpose high voltage switching and linear applications requiring small size and low weight devices. high voltage silicon epitaxial npn transistor to5 (to-205aa) underside view pin 1 ? emitter pin 2 ? base pin 3 ? collector mechanical data dimensions in mm (inches) 0.89 (0.035) max. 38.00 (1.5) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045)
2N5015 2N5015s semelab plc reserves the right to change test conditions, paramet er limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. howeve r semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7992 issue 1 electrical characteristics (t case =25c unless otherwise stated) parameter test conditions min. typ. max. unit v (br)cer* collector - emitter breakdown voltage i c = 100 a r be = 1.0k ? 1000 - - v (br)cbo* collector - base breakdown voltage i c = 200 a 1000 - - v (br)ebo* emitter - base breakdown voltage i c = 0 i e = 50 a 5.0 - - v v cb = 760v - - 12 i cbo* collector - base cut-off current t case = 100c - 10 100 i ebo* emitter - base cut-off current v eb = 4v - - 20 a v ce(sat) * collector - emitter saturation voltage i c = 20ma i b = 5.0ma - - 1.8 v v be(sat) * base - emitter saturation voltage i c = 20ma i b = 5.0ma - - 1.0 v i c = 5ma v ce = 10v 10 - - i c = 20ma v ce = 10v 30 - 180 h fe * dc current gain t case = -55c 10 - - dynamic characteristics (t case =25c unless otherwise stated) i c = 20ma v ce = 10v f t transition frequency f = 10mhz 10 - - mhz i e = 0 v cb = 10v c obo open circuit output capacitance f = 1.0mhz - - 30 pf * pulse test t p = 300 s, < 2% thermal characteristics r jc thermal resistance junction - case max 50 c/w r ja thermal resistance junction - ambient max 175 c/w
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